| Title | Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues |
| Publication Type | Conference Paper |
| Year of Publication | 2012 |
| Authors | Chen, F, Mittl, S, Shinosky, M, Swift, A, Kontra, R, Anderson, B, Aitken, J, Wang, Y, Kinser, E, Kumar, M, Wang, Y, Kane, T, Feng, KD, Henson, WK, Mocuta, D, Li, Di-an |
| Conference Name | Reliability Physics Symposium (IRPS), 2012 IEEE International |
| Date Published | april |
| Keywords | advanced VLSI circuits, copper contact, diffusion contacts, DRAM chips, epitaxial source-drain, FinFET, insulators, integrated circuit reliability, metal gate, middle-of-line PC-to-CA dielectric reliability, middle-of-line poly gate-to-diffusion contact reliability issues, MOL PC-CA shorts, MOL PC-to-CA dielectric reliability, polysilicon control gate, size 32 nm, SRAM chips, SRAM functional stress failures, SRAM yield loss, stress liner, VLSI |
| DOI | 10.1109/IRPS.2012.6241865 |
