Title | Analysis of process variation's effect on SRAM's read stability |
Publication Type | Conference Paper |
Year of Publication | 2006 |
Authors | Tsai, C-K, Marek-Sadowska, M |
Conference Name | Quality Electronic Design, 2006. ISQED '06. 7th International Symposium on |
Date Published | march |
Keywords | BSIM3v3 model, circuit stability, DC voltage-transfer characteristics, integrated circuit design, logic design, manufacturing process variations, power supply voltage variations, SRAM chips, SRAM read operation, SRAM stability, transistor current model, transistors threshold voltage |
Abstract | In this paper we analyze the effect of manufacturing process variations on the SRAM stability in the read operation. We analyze the SRAM's read operation and the DC voltage-transfer characteristics (VTCs). Based on the VTCs, we define the read margin to characterize the SRAM cell's read stability. We calculate the read margin based on the transistor's current model using the BSIM3v3 model. Experimental results show that the read margin accurately captures the SRAM's read stability as a function of the transistors threshold voltage and the power supply voltage variations |
DOI | 10.1109/ISQED.2006.26 |